Résumé
We calculate the density of states of a two dimensional electron gas located
at the interface of a GaAlAs/GaAs heterojunction. The disorder potential which
is generally created by a single doping layer behind a spacer, is here enhanced
by the presence of a second delta doped layer of scatterers which can be
repulsive or attractive impurities. We have calculated the density of states by
means of the Klauder's approximation, in the presence of a magnetic field of
arbitrary strength. At low field either band tails or impurity bands are
observed for attractive potentials, depending on the impurity concentration. At
higher field, impurity bands are observed for both repulsive and attractive
potentials. We discuss the effect of such an asymmetrical density of states on
the transport properties in the quantum Hall effect regime.