Abstract
A photovoltaic cell is provided that can be used under high levels of solar concentration (> 1000 suns). The present cell includes at least one junction produced on a Substrate based on gallium antimonide, the at least one junction having two alloys based on an antimonide material (GaAl, AsSb) lattice-matched on the substrate GaSb. If there are several junctions, two neighbouring junctions are separated by a tunnel junction.