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Zeeman splittings of excitonic transitions at the Gamma point in wurtzite GaN: A magnetoreflectance investigation
Journal article   Peer reviewed

Zeeman splittings of excitonic transitions at the Gamma point in wurtzite GaN: A magnetoreflectance investigation

J. Campo, M. Julier, Dominique Coquillat, Jean-Paul Lascaray, Denis Scalbert and Olivier Briot
Physical Review B: Condensed Matter and Materials Physics (1998-2015), Vol.56, pp.R7108-R7111
1997

Abstract

SEMIMAGNETIC SEMICONDUCTORS EXCHANGE INTERACTION EPILAYERS GAAS INP
Wurtzite GaN on (0001) sapphire is studied by means of reflectance and magnetocircular dichroism up to 5.5 T at 2 K. This very powerful technique allows us to determine the Zeeman splittings to be about 0.05 meV/T for the X-A and X-C excitons and almost zero for the X-B exciton. Reflectance and dichroism are interpreted with a model of Gaussian dispersion of the excitonic energies and are in excellent agreement with previously proposed band-edge models.
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