Résumé
X-ray irradiation is performed in order to study the behavior of lateral hetero-junction Schottky diode to help predict the effect of X-ray on recessed gate high electron mobility transistor (HEMT) based on the same process flow. The Schottky diodes are subjected to high dose rate X-ray and present a threshold voltage positive shift and an increase in reverse current leakage on I-V characteristics; 100 °C annealing is performed, and the depth of the traps and their origin is identified through fitting of detrapping model with experimental forward voltage shift post-annealing. Hypothesis regarding the increased current leakage are proposed following observed I-V measurements. The obtained results will be used as basis for further studies of components with the same process flow in order to devise a rad-hard version of components.