Résumé
ZnO thin films were prepared on Si (100) substrates by RF sputtering. The crystalline property of the films were observed to vary with the substrate temperature used. X-ray diffraction (XRD) measurement showed that the substrate temperature ZnO films exhibited preferred c-axis oriented (002) of below 0.32 degree full width at half maximum of X-ray rocking curves, an extremely high resistivity of 1010 Omega .cm and an energy gap of 3.3 eV at room temperature. It was found that a substrate temperature of 100 degree C and target/substrate distance about 50 mm, very low gas pressures of 3.35x10-3 Torr in argon and oxygen mixed gas atmosphere giving to ZnO thin films a good homogeneity and a high crystallinity.