Voltage tuneable terahertz emission from a ballistic nanometer InGaAs/InAlAs transistor

Journal article

Peer reviewed

J. Lusakowski, N. Dyakonova, L. Varani, J. Mateos, T. Parenty, A. Cappy, V. Popov and M.S. Shur

Journal of Applied Physics, Vol.97(6)

2005

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Title: Voltage tuneable terahertz emission from a ballistic nanometer InGaAs/InAlAs transistor
Creators - without role: J. Lusakowski - Groupe d'étude des semiconducteurs
N. Dyakonova - Centre National de la Recherche Scientifique
L. Varani - Université de Montpellier
J. Mateos - Universidad de Salamanca
T. Parenty - Institut d'électronique de microélectronique et de nanotechnologie
A. Cappy - Centre National de la Recherche Scientifique
V. Popov
M.S. Shur
Publication Details: Journal of Applied Physics, Vol.97(6)
Identifiers: 9937032309311
Academic Unit: Université de Montpellier
Language: English
Resource Type: Journal article
Local Fields: hal-00330467