Vacuum, temperature, and time dependencies of field-emission current for RF-MEMS applications

Kiyotaka Yamashita; Winston Sun; Benoit Charlot; Kuniyuki Kakushima; Hiroyuki Fujita; Hiroshi Toshiyoshi

doi:10.1016/j.mee.2007.01.185

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Vacuum, temperature, and time dependencies of field-emission current for RF-MEMS applications

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Vacuum, temperature, and time dependencies of field-emission current for RF-MEMS applications

Kiyotaka Yamashita, Winston Sun, Benoit Charlot, Kuniyuki Kakushima, Hiroyuki Fujita et Hiroshi Toshiyoshi

Microelectronic engineering, Vol.84(5), pp.1345-1353

01/05/2007

DOI: https://doi.org/10.1016/j.mee.2007.01.185

Résumé

Field-emission

RF-MEMS

Vacuum micro-electronics

We propose to utilize the field-emission (FE) effect on a novel micro-machined device to modulate the incoming radio-frequency signal for RF-MEMS ( radio- frequency micro- electro- mechanical system) applications. In this paper, we present some preliminary results such as pressure and temperature dependencies of the FE current. We also notice that by annealing the device inside the vacuum chamber at 200 °C for 20 min, large FE current (85 nA) at low voltage (3 V) can be produced. The leakage current was reduced by employing a silicon-on-insulator (SOI) wafer with thicker buried-oxide layer. Fabrication procedures and experimental results will be discussed.

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Détails

Titre: Vacuum, temperature, and time dependencies of field-emission current for RF-MEMS applications
Créateurs - sans rôle: Kiyotaka Yamashita - IIS, University of Tokyo, 4-6-1 Komaba, Meguroku, Tokyo, 153-8505, Japan
Winston Sun - IIS, University of Tokyo, 4-6-1 Komaba, Meguroku, Tokyo, 153-8505, Japan
Benoit Charlot - IIS, University of Tokyo, 4-6-1 Komaba, Meguroku, Tokyo, 153-8505, Japan
Kuniyuki Kakushima - Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, Japan
Hiroyuki Fujita - IIS, University of Tokyo, 4-6-1 Komaba, Meguroku, Tokyo, 153-8505, Japan
Hiroshi Toshiyoshi - IIS, University of Tokyo, 4-6-1 Komaba, Meguroku, Tokyo, 153-8505, Japan
Détails de publication: Microelectronic engineering, Vol.84(5), pp.1345-1353
Éditeur: Elsevier B.V
Nombre de pages: 9
Identifiants: 99162122609311
Unité académique: Institut d'Electronique et des Systèmes - IES
Langue: English
Type de ressource: Journal article