Use of the radiation-induced charge neutralization mechanism to achieve annealing of 0.35 μm SRAMs

Journal article

Peer reviewed

O. Quittard, F. Joffre, C. Brisset, C. Oudea, Frédéric Saigné, L. Dusseau, J. Fesquet and J. Gasiot

IEEE Transactions on Nuclear Science, Vol.46(6), pp.1633 - 1639

1999

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Title: Use of the radiation-induced charge neutralization mechanism to achieve annealing of 0.35 μm SRAMs
Creators - without role: O. Quittard - CEA LETI
F. Joffre - CEA LETI
C. Brisset - CEA Paris-Saclay
C. Oudea
Frédéric Saigné - Université de Montpellier
L. Dusseau - Université de Montpellier
J. Fesquet - Centre d'Electronique et de Micro-optoélectronique de Montpellier
J. Gasiot - Université de Montpellier
Publication Details: IEEE Transactions on Nuclear Science, Vol.46(6), pp.1633 - 1639
Identifiers: 9946464109311
Academic Unit: Université de Montpellier
Language: English
Resource Type: Journal article
Local Fields: hal-01801613