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Use of Laser Interferometry and Optical Emission Spectroscopy for Monitoring the Reactive Ion Etching of 6H - and 4H-SiC
Article de revue   Avec comité de lecture

Use of Laser Interferometry and Optical Emission Spectroscopy for Monitoring the Reactive Ion Etching of 6H - and 4H-SiC

Nicolas Camara, George Konstantinidis et Konstantinos Zekentes
Materials science forum, Vol.433-436, pp.693-696
15/09/2003

Résumé

Reactive Ion Etching Laser Interferometry Optical Emission Spectroscopy

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