Abstract
The effect of uniaxial compressional stress on the resistivity of p type GaSb has been measured between 4.2 K-300 K. We have determined the deformation potential constants b and d of the Γ8 level and the effective Bohr radius by measuring the variation of the acceptor binding energy. We have compared data obtained directly by modulation spectroscopy with acceptor binding energy method under uniaxial stress. We have made a study of impurity conduction processes in this p type III-V compound and compared our experimental results with i) the theory of Mikoshiba for conduction by impurity band and ii) the models of Abrahams and Miller and Shklovskii for conduction by hopping.