Abstract
A p-i-n superlattice photovoltaic detector is presented, operating uncooled in the 3-5 μm mid-wavelength infrared region. The active zone of the detector device, grown by molecular beam epitaxy on a p-type GaSb substrate, is made of 150 periods of strain compensated InAs/InSb/GaSb (10/1/10 monolayers) superlattice (SL). The SL detector exhibited at 293 K a cutoff wavelength of 5.9 μm, an absorption coefficient of 5×103 cm-1 and a responsivity of 0.7 mA/W at 3.5 μm.