Abstract
The formation of sacrificial oxides by UV-ozone exposure on GaAs and InP is a well established procedure in the preparation of clean substrates for MBE growth. We describe a UV-ozone treatment used to prepare GaSb(100) substrates and report results obtained by Auger (Auger electron spectroscopy) which show that the quality of the so prepared substrates is excellent for MBE (molecular beam epitaxy).