Résumé
We report on high operating temperature midwave infrared detectors based on type II InAs/GaSb superlattices (SLs) with a p-on-n polarity. All InAs/GaSb SLs photodiodes reported so far have a n-on-p polarity with a thin InAs n-type top contact, that is incompatible with most present day readout integrated circuits. Current-voltage measurements reveal dark current densities of similar to 5x10(-7) A/cm(2) (82 K) and 0.18 A/cm(2) (240 K) at -0.1 V. R(0)A products were equal to similar to 1x10(5) Omega cm(2) (82 K) and 0.24 Omega cm(2) (240 K). Zero-biases D-* were estimated to be 2x10(12) and 2x10(9) Jones at 82 and 240 K, respectively. (c) 2007 American Institute of Physics.