Abstract
The structures and electroluminescence characteristics of new two types of single mode A3B5 semiconductor tunable lasers in the 1.8-3.9 µm spectral range have been demonstrated. The first type of tunable diode laser based on quaternary solid solutions GaInAsSb and GaAlAsSb lattice matched to GaSb substrate covers 1.8-2.4 µm spectral range. Such tunable 1.8-2.4 µm lasers have single mode or quasi- single mode operation in the wide temperature range from 1.6 to 300K. The second type of tunable diode laser based on multiple component InPAsSb/InAsSb lattice matched or mismatched to InAs substrate covers 2.8-3.9 µm spectral range, which was not available for diode laser specroscopy until nowadays. Such tunable 2.8-3.9 µm lasers have CW single mode operation up to 100K and pulse operation up to 180K. These lasers can be the key devices for diode laser spectroscopy and sensitive detection of pollutants.