Abstract
Thin semiconducting thermoelectric films with narrow energy band gaps are considered to be very promising for future microdevice applications (sensors and generators). The polycrystalline BiSbTe alloys (V-VI semiconductors) are examples. In this report, the detailed temperature dependence of electrical resistivity [ρ(T)], n- and p-type carrier concentration [n(T) and p(T)], and Hall mobility [μ(T)] of n-type Bi2Te3, p-type Sb2Te3, and p-type (Bi1-xSbx)2Te3 (x=0.73 and 0.77) alloy films prepared by metalorganic chemical vapor deposition are presented in the range of 100-500 K (...)