Abstract
GaN layers grown by MOCVD or by MBE on (0001) sapphire have been characterised by transmission electron microscopy (TEM). We make a review of the different crystallographic structures found in theses GaN layers. We comment shortly on the nitridation of the sapphire and the structure of the buffer layer (BL). We point out that the roughness of the BL can be an important parameter for releasing the residual strain of the GaN layer. We compute the Keating energies of the main inversion domain boundaries (IDBs) and translation domains boundaries (TDBs) observed in some GaN layers. The observed structures correspond to the lowest energy models. Perfect dislocations have Burgers vectors equal to a, a + c and c. The dislocation lines are generally parallel to the c-axis. a-Edge dislocations are generally not dissociated and we propose an atomic model for them. Screw dislocations with a Burgers vector equal to c, can 'open and close' during growth leaving holes (the so-called nanopipes) in the structure. (C) 1997 Elsevier Science S.A.