Transfer impedance calculations of electronic noise in two-terminal semiconductor structures

Journal article

Peer reviewed

E. Starikov, P. Shiktorov, V. Gružinskis, L. Varani, J.-C. Vaissière, J.-P. Nougier, T. Gonzalez, J. Mateos, D. Pardo and L. Reggiani

Journal of Applied Physics, Vol.83(4), pp.2052-2066

15/02/1998

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Title: Transfer impedance calculations of electronic noise in two-terminal semiconductor structures
Creators - without role: E. Starikov - Center for Physical Sciences and Technology
P. Shiktorov - Center for Physical Sciences and Technology
V. Gružinskis - Center for Physical Sciences and Technology
L. Varani - Université de Montpellier
J.-C. Vaissière - Université de Montpellier
J.-P. Nougier - Université de Montpellier
T. Gonzalez - Universidad de Salamanca
J. Mateos - Universidad de Salamanca
D. Pardo - Universidad de Salamanca
L. Reggiani - Istituto Nazionale per la Fisica della Materia
Publication Details: Journal of Applied Physics, Vol.83(4), pp.2052-2066
Identifiers: 9944749409311
Academic Unit: Université de Montpellier
Language: English
Resource Type: Journal article
Local Fields: hal-02394571