Transconductance characteristics and plasma oscillations in nanometric InGaAs field effect transistors

Journal article

Peer reviewed

J.-F. Millithaler, J. Pousset, L. Reggiani, H. Marinchio, L. Varani, C. Palermo, P. Ziadé, J. Mateos, T. González and S. Perez

Solid-State Electronics, Vol.56(1), pp.116-119

02/2011

Files and links (1)

url

Find in HALView

1 Record Views

Title: Transconductance characteristics and plasma oscillations in nanometric InGaAs field effect transistors
Creators - without role: J.-F. Millithaler - Materia
J. Pousset - Istituto Nazionale per la Fisica della Materia
L. Reggiani - Istituto Nazionale per la Fisica della Materia
H. Marinchio - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
L. Varani - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
C. Palermo - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
P. Ziadé - Lebanese University
J. Mateos - Universidad de Salamanca
T. González - Universidad de Salamanca
S. Perez - Universidad de Salamanca
Publication Details: Solid-State Electronics, Vol.56(1), pp.116-119
Identifiers: 9945751009311
Academic Unit: Institut d'Electronique et des Systèmes - IES
Language: English
Resource Type: Journal article
Local Fields: hal-02450334