Total dose effects on bipolar integrated circuits: characterization of the saturation region

J. Boch; Frédéric Saigné; S. Ducret; R.D. Schrimpf; D.M. Fleetwood; P. Lacconi; L. Dusseau

doi:10.1109/TNS.2004.839143

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Total dose effects on bipolar integrated circuits: characterization of the saturation region

Journal article

Peer reviewed

Total dose effects on bipolar integrated circuits: characterization of the saturation region

J. Boch, Frédéric Saigné, S. Ducret, R.D. Schrimpf, D.M. Fleetwood, P. Lacconi and L. Dusseau

IEEE Transactions on Nuclear Science, Vol.51(issue 6), pp.3225 - 3230

12/2004

DOI: https://doi.org/10.1109/TNS.2004.839143

Abstract

The total-dose response of bipolar microcircuits is investigated. A recovery of the degradation is observed for high total dose in the saturation region. The circuit response in this region is studied based on room temperature annealing. The role of the electric field is studied and the results are discussed in terms of hardness assurance.

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Title: Total dose effects on bipolar integrated circuits: characterization of the saturation region
Creators - without role: J. Boch - Université Côte d'Azur
Frédéric Saigné - Université de Montpellier
S. Ducret - Université de Montpellier
R.D. Schrimpf - Vanderbilt University
D.M. Fleetwood - Vanderbilt University
P. Lacconi
L. Dusseau - Université de Montpellier
Publication Details: IEEE Transactions on Nuclear Science, Vol.51(issue 6), pp.3225 - 3230
Identifiers: 9943910309311
Academic Unit: Université de Montpellier
Language: English
Resource Type: Journal article
Local Fields: hal-00327421