Résumé
Chemical Vapor Deposited (CVD) diamond is a very promising material extensively studied in many technologies. Thermoluminescence (TSL) experiments demonstrate that important thermal quenching phenomenon occurs with microwave plasma chemical vapour deposited (MWCVD) diamond. This phenomenon leads to a large discrepancy on the determination of electronic trap parameters. Thermally stimulated conductivity phenomenon is not affected by thermal quenching and allows an easier determination of trap parameters than TSL measurements. The difference between the both ways of trap energy computation is found to be around 4% instead of 28% obtained when thermal quenching is failed.