Résumé
The thermal runaway in SiC Schottky barrier diodes (SBDs) caused by heavy ions was identified by a device simulator with parameters carefully extrapolated to an extended temperature range far exceeding the melting point of SiC. It is shown that the critical electric field needed to activate the impact ionization attributable to SiC material and the Schottky barrier contact on it are responsible for the thermal runaway in SiC SBDs.