Theory of Ballistic Electron Transport in n+ – i – n+ Diodes. Negative Dynamic Resistance in THz-Frequency Range

Journal article

Peer reviewed

Theory of Ballistic Electron Transport in n⁺ – i – n⁺ Diodes. Negative Dynamic Resistance in THz-Frequency Range

V. Korotyeyev, V. Kochelap, A. Klimov, G. Sabatini, H. Marinchio, C. Palermo and L. Varani

Journal of Nanoelectronics and Optoelectronics, Vol.6(2), pp.169-187

01/06/2011

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Title: Theory of Ballistic Electron Transport in n⁺ – i – n⁺ Diodes. Negative Dynamic Resistance in THz-Frequency Range
Creators - without role: V. Korotyeyev - V.E. Lashkaryov Institute of Semiconductor Physics
V. Kochelap - V.E. Lashkaryov Institute of Semiconductor Physics
A. Klimov - Institute of Radio-Engineering and Electronics
G. Sabatini - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
H. Marinchio - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
C. Palermo - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
L. Varani - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
Publication Details: Journal of Nanoelectronics and Optoelectronics, Vol.6(2), pp.169-187
Identifiers: 9945750709311
Academic Unit: Institut d'Electronique et des Systèmes - IES
Language: English
Resource Type: Journal article
Local Fields: hal-02450353