Abstract
Time-resolved photoluminescence spectra of orange light emitting (Ga,In)N-based devices have been grown by metal-organic vapour phase epitaxy on C plane sapphire for indium compositions ranging up to 23 percents. The temperature dependent time resolved photoluminescence spectra collected through the 8K-300K range are found to exhibit behaviours that are found to be very similar to what is reported in literature in samples with different designs (well width, indium composition in the well layer). However, our quantum devices always exhibit a two-mode exponential decay with a long decay time about 4 to five times longer than the short one, which was not reported so far.The photoluminescence decay times are wavelength-dependent as always found for indium rich quantum well, a behaviour that is interpreted in terms of carrier localization in indium-rich regions of the alloy active layers. The spectral dependence of the decay time, which were fitted using sigmoidal function, give access to an average decay time, centred at a given energy, with a phenomenological broadening constant. The average splitting between characteristic energies for long and short decay times, the broadening constants both increase with the indium composition. Radiative and non-radiative recombination times are deduced in the whole temperature range. The average decay time increase exponentially with the product of the well width to indium composition. This quantity is found to be an excellent indicator of the device performance.