The exciton-polariton effect on the photoluminescence of GaN on sapphire

Bernard Gil; Sandra Ruffenach; Olivier Briot

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The exciton-polariton effect on the photoluminescence of GaN on sapphire

Journal article

Peer reviewed

The exciton-polariton effect on the photoluminescence of GaN on sapphire

Bernard Gil, Sandra Ruffenach and Olivier Briot

Solid State Communications, Vol.104, pp.267-270

1997

Abstract

STRUCTURE LASER-DIODES

OPTICAL-PROPERTIES

EPILAYERS

We report on the observation of free exciton photoluminescence associated with low and upper-polariton branch in GaN on sapphire. This is observed for both A and B lines. (C) 1997 Published by Elsevier Science Ltd.

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Title: The exciton-polariton effect on the photoluminescence of GaN on sapphire
Creators - without role: Bernard Gil - Groupe d'étude des semiconducteurs
Sandra Ruffenach - Groupe d'étude des semiconducteurs
Olivier Briot - Groupe d'étude des semiconducteurs
Publication Details: Solid State Communications, Vol.104, pp.267-270
Identifiers: 9947523609311
Academic Unit: Laboratoire Charles Coulomb - L2C
Language: English
Resource Type: Journal article
Local Fields: hal-00545875