Résumé
In this paper we report on a study of an atmospheric pressure plasma enhanced chemical vapor deposition process based on a simple dielectric barrier discharge using a low frequency (28 kHz) high voltage generator. We have investigated the effect of a range of deposition parameters on the properties of silica-like layers grown from a tetraethoxysilane (TEOS)/He/O-2 system. It is shown that the deposition temperature is a critical parameter in determining the composition, growth rate and characteristics of the deposited films, and the level of electrical power absorbed in plasma determines the concentration of active silicon containing species formed in the discharge generation region. Deposition rates up to 19 nm min(-1) can be achieved and layer properties, such as refractive index, porosity and breakdown voltage, are comparable with those obtained by more conventional CVD processes. General optimum conditions for high growth rates of good quality films can be inferred from the results.