- Title
- Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates
- Creators - without role
- V. V. Rumyantsev - Institute for Physics of MicrostructuresD. V. KozlovS. V. Morozov - Institute for Physics of MicrostructuresM. A. Fadeev - Institute for Physics of MicrostructuresAleksandr Kadykov - Université de Montpellier, Laboratoire Charles Coulomb - L2CFrederic Teppe - Université de Montpellier, Laboratoire Charles Coulomb - L2CV. S. VaravinM. V. Yakushev - Russian Academy of SciencesN. N. MikhailovS. A. DvoretskiiV. I. Gavrilenko - N. I. Lobachevsky State University of Nizhny Novgorod
- Publication Details
- Semiconductor Science and Technology, Vol.32(9)
- Identifiers
- 9945027709311
- Academic Unit
- Laboratoire Charles Coulomb - L2C
- Language
- English
- Resource Type
- Journal article
- Local Fields
- hal-01830522
Journal article
Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates
Semiconductor Science and Technology, Vol.32(9)
09/2017
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