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Terahertz investigation of high quality indium nitride epitaxial layers
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Terahertz investigation of high quality indium nitride epitaxial layers

Ym Meziani, Benedicte Maleyre, Ml Sadowski, Sandra Ruffenach, Olivier Briot et Wojciech Knap
Physica Status Solidi A (applications and materials science), Vol.202, p.590-592
2005

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FUNDAMENTAL-BAND GAP INN SEMICONDUCTORS
We report on the optical characterization of InN layers in the THz range and magnetic fields up to 13 T. The results are interpreted using the dielectric function formalism, with contributions of cyclotron resonance, phonons, plasmons and helicon wave excitations. We show how THz radiation transmission measurements can provide an optical contactless method of determining the quality (carrier density and momentum scattering rate) in the InN layers. (c) 2005 WILEY-VCH Verlag GmbH W Co.

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