Abstract
Imaging at 0.6 THz is tested with a commercial GaAs high-electron-mobility transistor (HEMT) operated at room temperature. The results allow the assessment of the potential of future antenna-fitted HEMT arrays for real-time imaging.
- Title
- Terahertz imaging with GaAs field-effect transistors
- Creators - without role
- A. Lisauskas - Goethe University FrankfurtW. von Spiegel - Goethe University FrankfurtStephane Boubanga Tombet - Groupe d'étude des semiconducteursAbdelouahad El Fatimy - Université de MontpellierDominique Coquillat - Université de MontpellierFrederic Teppe - Université de MontpellierNina Diakonova - Groupe d'étude des semiconducteursWojciech Knap - Université de MontpellierH. G. Roskos - Goethe University Frankfurt
- Publication Details
- Electronics Letters, Vol.44, pp.408-409
- Identifiers
- 9936255109311
- Academic Unit
- Université de Montpellier
- Language
- English
- Resource Type
- Journal article
- Local Fields
- hal-00540633