Abstract
In this article we present an analytical model for the calculation of high-frequency electronic noise in n+nn+ structure based on In0.53Ga0.47As material by using the analytical approach of Heterostructure Barrier Varactor (HBV) proposed in Ref. [1]. The model enables to interpret the different resonances appearing in the current and voltage spectral densities. In particular, we discuss the effect of geometrical parameters such as the total length of device and the free carriers concentration on the noise resonance. The results can be useful in optimizing the device parameters for the generation of high frequency resonances noise.