Abstract
In this paper, we report on temperature dependence performances of a midwave infrared (MWIR) Ga-free InAs/InAsSb type-II superlattice (T2SL) barrier (XBn) photodetector grown by molecular beam epitaxy on n-type GaSb substrate. The T2SL structure, with a 3 µm thick active region, was processed in a mesa device in order to perform dark current measurements and spectral photoresponse as a function of temperature. Analyses of these temperature dependence characterizations help us to improve the design of Ga-free T2SL MWIR XBn detectors.