Abstract
A comparison is made between transient regimes obtained, on p-Si at 300 K, by a Monte Carlo simulation and by an iterative solution of the Boltzmann equation : the agreement is excellent. The transient regime : a) depends relatively few on the energy bandshapes ; b) Is strongly dependent on the initial energy, the increase of which may lead to a disappearance of the velocity overshoot ; c) Slowly depends on the shape of the initial distribution function. In every cases, the transient regime computed using the balance equations is in very satisfactory agreement with the previous simulations.