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THz detectors based on Si-CMOS technology field effect transistors–advantages, limitations and perspectives for THz imaging and spectroscopy
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THz detectors based on Si-CMOS technology field effect transistors–advantages, limitations and perspectives for THz imaging and spectroscopy

Jacek Marczewski, Dominique Coquillat, Wojciech Knap, C. Kolacinski, P. Kopyt, K. Kucharski, J. Lusakowski, D. Obrebski, D. Tomaszewski, D. Yavorskiy, …
Opto-Electronics Review, Vol.26(4)
13/09/2018

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