TCAD simulation of radiation-induced leakage current in 1T1C SDRAM

Journal article

Peer reviewed

Hoang Nguyen, A. Rodriguez, Frédéric Wrobel, A. Michez, F. Bezerra, N. Chatry and B. Vandevelde

Microelectronics Reliability, Vol.88-90, pp.974-978

09/2018

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Title: TCAD simulation of radiation-induced leakage current in 1T1C SDRAM
Creators - without role: Hoang Nguyen - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
A. Rodriguez - Syrlinks (FRANCE)
Frédéric Wrobel - Institut d'Électronique et des Systèmes
A. Michez - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
F. Bezerra - Centre National d'Études Spatiales
N. Chatry - TRAD [Labège]
B. Vandevelde
Publication Details: Microelectronics Reliability, Vol.88-90, pp.974-978
Identifiers: 9945286609311
Academic Unit: Institut d'Electronique et des Systèmes - IES
Language: English
Resource Type: Journal article
Local Fields: hal-02086293