Résumé
The author analyzes the optical properties of GaN homoepitaxies grown on semipolar
(
11
−
2
x
)
- and
(
10
−
1
x
)
-oriented GaN substrates. He works here in the specific cases of
(
11
−
22
)
-,
(
10
−
11
)
-, and
(
10
−
13
)
-orientations which currently deserve intense experimental activity. The author finds the optical anisotropy of the GaN films to be strictly ruled by the angle between the growth plane and the ⟨001⟩ direction of the GaN material.