Abstract
Experimental results are presented for current-voltage and dynamic resistance-voltage characteristics of Hg1?xCdxTe ion implanted n+-on-p junction photodiodes with x = 0, 3. By measuring the temperature dependence of the dc characteristics in the temperature range [77K, 175K], it was found that the dark current can be represented with two components at low reverse-bias: diffusion and surface leakage current. Furthermore, reporting on electrical noise spectral density as a function of temperature and dark current, we assume that below 120K, 1/f noise current is surface leakage current related.