- Title
- Study and design of resistive switching behaviors in PMMA-based conducting-bridge random-access memory (CBRAM) devices
- Creators - without role
- Jiaying Jian - Northwestern Polytechnical UniversityHonglong Chang - Northwestern Polytechnical UniversityArnaud Vena - Université de Montpellier, Institut d'Electronique et des Systèmes - IESBrice Sorli - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
- Publication Details
- Microsystem Technologies, Vol.23(6), pp.1719 - 1725
- Identifiers
- 9942380809311
- Academic Unit
- Institut d'Electronique et des Systèmes - IES
- Language
- English
- Resource Type
- Journal article
- Local Fields
- hal-01627974
Journal article
Study and design of resistive switching behaviors in PMMA-based conducting-bridge random-access memory (CBRAM) devices
Microsystem Technologies, Vol.23(6), pp.1719 - 1725
06/2017
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