Abstract
We investigate the MBE growth and properties of Sb-based nanostructures, very promising candidates as active material for mid infrared light sources operating between 3 and 5 m. We show that the key feature for the fabrication of highly dense and optically efficient InSb quantum dots is the control of In-adatoms mobility. We obtain defect-free nanostructures with a density as high as 8 × 1010 dots/cm2 together with improved performance in terms of optical emission. Photoluminescence and electroluminescence emissions, peaked at around 360 meV, have been measured which exhibit a linewidth of 47 meV at 90 K. The emission is detected up to room temperature, with an intensity quenching factor as low as 4 from 90 K to 300 K, demonstrating good thermal stability of the material