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Strain effects in GaN epilayers.
Journal article

Strain effects in GaN epilayers.

Bernard Gil, Pierre Lefebvre and Hadis Morkoc
Comptes Rendus de l'Academie des Sciences. Série IV, Physique, Astronomie, Vol.1(1)
01/03/2000

Abstract

A review is given about the influence of strain fields on the optical properties of GaN epilayers. We find the basic constant of the material: crystal field splitting, spin-orbit interaction parameter, deformation potentials. We discuss the evolution of the exciton binding energy with strain.
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