Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

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K. Lekhal, B. Damilano, H. T. Ngo, Daniel Rosales, P. de Mierry, S. Hussain, P. Vennegues and Bernard Gil

Applied Physics Letters, Vol.106(14)

06/04/2015

Abstract

XE examine the impact of the heterostructure design at the scale of the structural and optical properties for yellow light emission

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Title: Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission
Creators - without role: K. Lekhal - Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications
B. Damilano - Centre National de la Recherche Scientifique
H. T. Ngo
Daniel Rosales - Université de Montpellier, Laboratoire Charles Coulomb - L2C
P. de Mierry - Centre National de la Recherche Scientifique
S. Hussain - Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications
P. Vennegues - Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications
Bernard Gil - Université de Montpellier, Laboratoire Charles Coulomb - L2C
Publication Details: Applied Physics Letters, Vol.106(14)
Identifiers: 9942555109311
Academic Unit: Laboratoire Charles Coulomb - L2C
Language: English
Resource Type: Journal article
Local Fields: hal-01238729