Stacking faults in intrinsic and N-doped 4HSiC: true influence of the N-doping on their multiplicity

Journal article

Peer reviewed

Gabrielle Regula, Maryse Lancin, Bernard Pichaud, Thomas Neisius, Rachid Daineche and Sandrine Juillaguet

Philosophical Magazine, Vol.93(10-12), pp.1317-1325

01/04/2013

Abstract

SiC

nitrogen

double stacking fault

quantum well action

Stacking faults in intrinsic and N-doped 4HSiC: true influence of the N-doping on their multiplicity

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Title: Stacking faults in intrinsic and N-doped 4HSiC: true influence of the N-doping on their multiplicity
Creators - without role: Gabrielle Regula
Maryse Lancin
Bernard Pichaud
Thomas Neisius
Rachid Daineche
Sandrine Juillaguet - Université de Montpellier, Laboratoire Charles Coulomb - L2C
Publication Details: Philosophical Magazine, Vol.93(10-12), pp.1317-1325
Identifiers: 9944233709311
Academic Unit: Laboratoire Charles Coulomb - L2C
Language: English
Resource Type: Journal article
Local Fields: hal-01936279