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Spin Defects in Hexagonal Boron Nitride as 2D Strain Sensors
Article de revue scientifique   Open Access   Avec comité de lecture

Spin Defects in Hexagonal Boron Nitride as 2D Strain Sensors

Zhao Mu, Zhaowei Zhang, Jules Fraunié, Cédric Robert, Grégory Seine, Bernard Gil, Guillaume Cassabois et Vincent Jacques
Advanced Functional Materials, Vol.36(36)
03/02/2026

Résumé

2D materials hBN strain Raman spectroscopy quantum sensing
Lattice deformation is a powerful way to engineer the properties of 2D materials, making their precise measurement an important challenge for both fundamental science and technological applications. Here, we demonstrate that boron‐vacancy () color centers in hexagonal boron nitride (hBN) enable quantitative strain sensing with sub‐micrometer spatial resolution. Using this approach, we precisely quantify the strain‐induced shift of the Raman mode in a multilayer hBN flake under uniaxial stress, establishing centers as a new tool for strain metrology in van der Waals heterostructures. Beyond strain sensing, our work also highlights the unique multimodal sensing functionalities offered by centers, which will be valuable for future studies of strain‐engineered 2D materials.

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