Abstract
From the simulation of the spectral response of the different photodetector devices elaborated in our laboratory (C.E.M.), we determine the influence of geometrical and physical parameters in order to achieve the best photodetector operating at the wavelength 2.55 μm. In this paper we present: Gao0.6In0.4Sbn/Ga0.6In0.4Sbp homojunctions matched on GaSbp substrate, Ga0.75In0.25As0.23Sbp/GaSbn ternary heterojunction and GaSbp/Ga0.74In0.26As0.23Sb0.77p/GaSbn quaternary heterojunction. The GaSbp layer with an energy band gap greater than Ga0.74In0.26As0.23Sb0.77p optical gap will act as a window, reducing the effect of surface recombinaison. Results of the simulation are compared to experimental curves to determine the values of photoelectrical parameters (diffusion length, recombination velocity at the surface ...).