Abstract
In this paper, we present a new numerical model of the gate leakage current noise in ultra-thin gate oxides. Unlike previous classical models, our model takes into account ultra-thin gate oxides. Localized noise sources in the oxide are implanted into the model, and by using a Green's function approach, the spectral cross-correlation of the electrical potential is evaluated at each node in the device mesh in order to obtain a highly accurate physical description. By comparing results from simulated devices with experimental noise measurements, we were able to determine the slow oxide trap density profiles. The latter are in good agreement with profiles expected from nitruration processes.