Abstract
Some recent results concerning swift heavy ion irradiation of thin SiO2 layers on Si under normal incidence irradiation leading to the formation of nanodots at the interface between the SiO2 film and the Si substrate or at the SiO2 surface are summarized. Moreover, we report observation of discontinuous and elongated tracks at the SiO2 surface after grazing incidence irradiation of SiO2–Si structures with fast heavy ion. A characterization of these nanostructures by means of Atomic Force Microscopy (AFM) has been performed. The present results are of major importance with regard to the development of emerging nanoelectronic devices and systems.