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Single-Event Upset Laser Testing of Various SRAM Resources of a 7-nm FinFET System-on-Chip and Correlation With Heavy Ion Data
Article de revue   Open Access   Avec comité de lecture

Single-Event Upset Laser Testing of Various SRAM Resources of a 7-nm FinFET System-on-Chip and Correlation With Heavy Ion Data

Salma Achaq, Vincent Pouget, L. Artola, G. Hubert, A. Urena, Florent Manni, A. Dufour et J. Boch
IEEE Transactions on Nuclear Science, Vol.72(4), pp.1460-1469
14/03/2025
DOI: https://doi.org/10.1109/TNS.2025.3551550

Résumé

Pulsed laser testing System-on-Chip 7 nm FinFET Single-Event Upset
We present the single-event upset (SEU) laser testing of different static random access memory (SRAM) resources of a 7-nm fin field-effect transistor (FinFET) programmable system-on-chip (SoC). The results provide original insights into the physical organization of the device, and testing challenges are discussed. Multiple-cell upsets (MCUs) are discussed together with Monte Carlo simulation results. Correlation with heavy ion data is presented and discussed.

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