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Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory
Journal article   Open access   Peer reviewed

Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

Alexandre Louis Bosser, Viyas Gupta, Arto Javanainen, Georgios Tsiligiannis, Stephen D. Lalumondiere, Dale L. Brewe, Véronique Ferlet-Cavrois, Helmut Puchner, Heikki Kettunen, Thierry Gil, …
IEEE Transactions on Nuclear Science, Vol.65(8), pp.1708-1714
08/2018

Abstract

Single-Event Effect Single-Event Upset SEFI FRAM X-ray Heavy ion Static test Dynamic test
This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. The underlying mechanisms are discussed.
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https://doi.org/10.1109/TNS.2018.2797543View
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