Simulation of p–i–n heterojunctions built on strain-compensated Si/Si0.40Ge0.60/Si multiple quantum wells for photodetection near 1.55 µm

Journal article

Peer reviewed

N. Sfina, J.-L. Lazzari, Y. Cuminal, Philippe Christol and M. Said

Thin Solid Films, Vol.517(1), pp.388-390

2008

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Title: Simulation of p–i–n heterojunctions built on strain-compensated Si/Si0.40Ge0.60/Si multiple quantum wells for photodetection near 1.55 µm
Creators - without role: N. Sfina - Centre National de la Recherche Scientifique
J.-L. Lazzari - Centre Interdisciplinaire de Nanoscience de Marseille
Y. Cuminal - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
Philippe Christol - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
M. Said - Centre National de la Recherche Scientifique
Publication Details: Thin Solid Films, Vol.517(1), pp.388-390
Identifiers: 9946911109311
Academic Unit: Institut d'Electronique et des Systèmes - IES
Language: English
Resource Type: Journal article
Local Fields: hal-00386891