Abstract
By numerical simulations, we investigate the large-signal photoresponse of InGaAs high electron mobility transistors submitted to THz radiations. The used pseudo-2D hydrodynamic model considers electron density and velocity conservations equations. A third equation is solved, in order to describe average energy conservation or to maintain it constantly equal to its thermal equilibrium value. In both cases, the calculated photoresponse increases with the incoming power density for its smallest values. For the higher values, a saturation of the photoresponse is observed, in agreement with experimental results, only when the energy conservation is accounted for. This allows to relate the limitation of the transistor detection features to electron heating phenomenon.