STUDY OF THE GAAS-AU AND SI-SIO2 INTERFACE FORMATION BY THE KELVIN METHOD

Journal article

Peer reviewed

L. Lassabatere, J.-M. Palau, E. Vieujot-Testemale, A. Ismail, C. Raisin, J. Bonnet and L. Soonckindt

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, Vol.1(3), pp.540-545

1983

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Title: STUDY OF THE GAAS-AU AND SI-SIO2 INTERFACE FORMATION BY THE KELVIN METHOD
Creators - without role: L. Lassabatere - Centre National de la Recherche Scientifique
J.-M. Palau - Centre National de la Recherche Scientifique
E. Vieujot-Testemale - Centre National de la Recherche Scientifique
A. Ismail
C. Raisin - Centre National de la Recherche Scientifique
J. Bonnet - Centre National de la Recherche Scientifique
L. Soonckindt - Centre National de la Recherche Scientifique
Publication Details: Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, Vol.1(3), pp.540-545
Identifiers: 9945890909311
Academic Unit: Université de Montpellier
Language: English
Resource Type: Journal article
Local Fields: hal-00323386