Logo image
Sign in
SEU mechanisms in spintronic devices: Critical parameters and basic effects
Journal article   Open access   Peer reviewed

SEU mechanisms in spintronic devices: Critical parameters and basic effects

Odilia Coi, Nomena Adrianjohany, Gregory Di Pendina, David Dangla, Robert Ecoffet, Bernard Diény and Lionel Torres
IEEE Transactions on Nuclear Science, Vol.68(8), pp.1533-1541
08/2021

Abstract

Radiation-induced switching mechanisms Temperature effects Breakdown voltage Radiation Effects Thermal Spike Model SEU STT-MRAM Linear Energy Transfer Thermal Effects
The paper investigates radiation-induced switching mechanisms, temperature effects, breakdown voltage, sensitive volume and critical charge definitions for Spin-Transfer Torque Magnetic Tunnel Junction. Thermal spike model is adopted to estimate the temperature reached during heavy ion irradiation and temperature effects are suggested to be responsible for the magnetic properties degradation and for upset processes.
url
Find in HALView

Metrics

1 Record Views

Details

Logo image